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| STE36N50-DA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA s s s s s V DSS 500 V R DS( on) < 0.14 ID 36 A 4 3 s s s s s LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 1 2 ISOTOP INDUSTRIAL APPLICATIONS: s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s ASYMMETRICAL HALF BRIDGE SMPS (WITH COMPLIMENTARY STE36N50-DK) INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M(*) P tot T stg Tj V ISO Parameter Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (RGS = 20 k) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) o o Value 500 500 20 36 24 144 380 3.3 -55 to 150 150 2500 Unit V V V A A A W W/o C o o C C V (*) Pulse width limited by safe operating area September 1994 1/9 STE36N50-DA DIODE ABSOLUTE MAXIMUM RATINGS Symbol V RRM V RS M I F(RMS ) I FRM P to t Parameter Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage RMS Forward Current Repet. Peak Forward Current (t p = 5 s, f = 5KHz) Total Dissipation at Tc = 25 C Derating Factor o Valu e 600 600 50 300 70 0.56 Unit V V A A W W/ o C THERMAL DATA R thj-cas e R thj-cas e R thc-h Thermal Resistance Junction-case (MOSFET) Thermal Resistance Junction-case (DIO DE) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max Max 0.3 1.78 0.05 o o o C/W C/W C/W AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%) Max Value 14 100 40 9 Unit A mJ mJ A MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage I D = 1 mA Test Conditions V GS = 0 Min. 500 300 1500 300 Typ. Max. Unit V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = 20 V T c = 125 oC ON () Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current Test Conditions ID = 1 mA T c = 100 oC 36 Min. 2 Typ. 3 0.12 Max. 4 0.14 0.28 Unit V A V GS = 10V ID = 18 A V GS = 10V I D = 18 A V DS > ID( on) x RD S(on) max V GS = 10 V 2/9 STE36N50-DA MOSFET ELECTRICAL CHARACTERISTICS (continued) DYNAMIC Symbol gfs () C iss C oss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID (on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 18 A V GS = 0 Min. 16 8000 1300 350 Typ. Max. Unit S pF pF pF SWITCHING ON Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 250 V I D = 18 A R G = 4.7 V GS = 10 V (see test circuit, figure 1) V DD = 400 V I D = 36 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) V DD = 400 V ID = 36 A VG S = 10 V Min. Typ. 45 85 700 Max. 65 120 Unit ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 295 35 145 nC nC nC SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 400 V I D = 36 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) Min. Typ. 100 45 160 Max. 140 65 225 Unit ns ns ns SOURCE DRAIN DIODE Symbol IS D I SDM(*) V S D () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 36 A VG S = 0 1 29 58 I SD = 36 A di/dt = 100 A/s T j = 150 o C V DD = 100 V (see test circuit, figure 3) Test Conditions Min. Typ. Max. 36 144 1.4 Unit A A V s C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/9 STE36N50-DA DIODE ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) STATIC Symbol V F (#) I R (##) Parameter Forward Voltage Drop Reverse Leakage Current IF = 20 A IF = 20 A Test Conditions T j = 25 o C T j = 125 o C T j = 25 o C T J = 125 o C Min. Typ. Max. 1.75 1.5 100 6 Unit V V A mA V R = VR RM x 0.8 V R = VR RM x 0.8 DINAMIC Symbol t rr Parameter Reverse Recovery Time I F = 0.5 A T j = 25 o C IF = 1 A V R = 30 v I RM Maximum Reverse Recovery Current Test Conditions IR= 1 A I rr = 0.25 A Min. Typ. 30 60 Max. Unit ns ns di F/dt = -50 A/s Tj = 25 oC Tj = 125 oC V R = 400 V IF = 20 A di F/dt = -160 A/s di F/dt = -500 A/s 12.5 17.5 A A TURN-ON SWITCHING Symbol t fr V FP Parameter Forward Recovery Time Peak Forward Voltage Test Conditions I F = 20 A di F/dt = 160 A/s Measured at: 1.1 x V f(MAX) T j = 25 o C Min. Typ. Max. 600 12 Unit ns V (#) Pulsed: Pulse duration = 380 s, duty cycle < 2 % (##) Pulsed: Pulse duration = 5 s, duty cycle < 2 % NOTE: For the complete DIODE characterization refer to STTA2006P datasheet Safe Operating Areas Thermal Impedance 4/9 STE36N50-DA Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 5/9 STE36N50-DA Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope 6/9 STE36N50-DA Cross-over Time Source-drain Diode Forward Characteristics Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge Test Circuit Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/9 STE36N50-DA ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O P 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 5.5 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.216 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G B A O N D E F J K L M H C 0041565 8/9 STE36N50-DA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9 |
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